Semiconductor device and method of forming including superjunction structure formed using angled implant process

ABSTRACT

A semiconductor device includes a superjunction structure formed using simultaneous N and P angled implants into the sidewall of a trench. The simultaneous N and P angled implants use different implant energies and dopants of different diffusion rate so that after annealing, alternating N and P thin semiconductor regions are formed. The alternating N and P thin semiconductor regions form a superjunction structure where a balanced space charge region is formed to enhance the breakdown voltage characteristic of the semiconductor device.

CROSS REFERENCE TO OTHER APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/423,154, entitled SEMICONDUCTOR DEVICE INCLUDING SUPERJUNCTIONSTRUCTURE FORMED USING ANGLED IMPLANT PROCESS, filed Feb. 2, 2017, nowU.S. Pat. No. 10,276,387, issued Apr. 30, 2019, which is a continuationof U.S. patent application Ser. No. 14/860,396, entitled SEMICONDUCTORDEVICE INCLUDING SUPERJUNCTION STRUCTURE FORMED USING ANGLED IMPLANTPROCESS, filed Sep. 21, 2015, now U.S. Pat. No. 9,595,609, which is acontinuation of U.S. patent application Ser. No. 14/495,817, entitledSEMICONDUCTOR DEVICE INCLUDING SUPERJUNCTION STRUCTURE FORMED USINGANGLED IMPLANT PROCESS, filed Sep. 24, 2014, now U.S. Pat. No.9,171,949, which patents and patent applications are incorporated hereinby reference in their entireties.

BACKGROUND OF THE INVENTION

Semiconductor devices incorporating superjunction structure to achieveimproved electrical characteristics are known. For example, metal oxidesemiconductor field effect transistor (MOSFET) devices can beincorporated with vertical or horizontal superjunction structure tooptimize the on-resistance and the breakdown voltage characteristics ofthe transistor. As an example, Fujihira describes configurations of thevertical super junction devices in the paper entitled “Theory ofSemiconductor Super Junction Devices” (Japan Journal of Applied PhysicsVol. 36, October 1997 PP 6254-6262). U.S. Pat. No. 6,097,063 alsodescribes a vertical semiconductor device having a drift region in whicha drift current flows if it is in the ON mode and which is depleted ifit is in the OFF mode. The drift region is formed as a structure havinga plurality of first conductive type divided drift regions and aplurality of second conductive type compartment regions in which each ofthe compartment regions is positioned among the adjacent drift regionsin parallel to make p-n junctions, respectively.

Challenges remain in the manufacturing of superjunction semiconductordevices. These challenges include the difficulties in forming thenanotubes of the superjunction structure, such as inter-diffusions ofthe N and P impurities in the superjunction structure at hightemperatures, difficulties of integrating different devices on a samechip, and high product costs when epitaxial processes are used, amongothers.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of the invention are disclosed in the followingdetailed description and the accompanying drawings.

FIG. 1 is a cross-sectional view of a lateral MOSFET device according toa first embodiment of the present invention.

FIG. 2 is a cross-sectional view of a lateral MOSFET device according toa second embodiment of the present invention.

FIGS. 3(a)-(h) are cross-sectional views illustrating the fabricationprocess steps for forming the lateral MOSFET device of FIG. 1 accordingto embodiments of the present invention.

FIG. 4 is a flowchart illustrating the fabrication process steps forforming the lateral MOSFET device of FIG. 1 in embodiments of thepresent invention.

FIGS. 5(a)-(h) are cross-sectional views illustrating the fabricationprocess steps for forming the lateral MOSFET device of FIG. 2 accordingto embodiments of the present invention.

FIG. 6 is a flowchart illustrating the fabrication process steps forforming the lateral MOSFET device of FIG. 2 in embodiments of thepresent invention.

DETAILED DESCRIPTION

The invention can be implemented in numerous ways, including as aprocess; an apparatus; a system; and/or a composition of matter. In thisspecification, these implementations, or any other form that theinvention may take, may be referred to as techniques. In general, theorder of the steps of disclosed processes may be altered within thescope of the invention.

A detailed description of one or more embodiments of the invention isprovided below along with accompanying figures that illustrate theprinciples of the invention. The invention is described in connectionwith such embodiments, but the invention is not limited to anyembodiment. The scope of the invention is limited only by the claims andthe invention encompasses numerous alternatives, modifications andequivalents. Numerous specific details are set forth in the followingdescription in order to provide a thorough understanding of theinvention. These details are provided for the purpose of example and theinvention may be practiced according to the claims without some or allof these specific details. For the purpose of clarity, technicalmaterial that is known in the technical fields related to the inventionhas not been described in detail so that the invention is notunnecessarily obscured.

According to embodiments of the present invention, a semiconductordevice includes a superjunction structure formed using simultaneous Nand P angled implants into the sidewall of a trench. More specifically,the superjunction structure includes alternate N and P type thinsemiconductor regions formed on the sidewall of the trench. A thinsemiconductor region (“nanotube”) of a first conductivity type functionsas a conduction channel of the semiconductor device and is bordered orsandwiched by thin semiconductor regions (“nanotubes”) of a second,opposite conductivity type to form a balanced space charge region forenhancing the breakdown voltage characteristic of the semiconductordevice.

In one embodiment, the semiconductor device incorporating thesuperjunction structure is a lateral MOSFET device of the firstconductivity type. The superjunction structure includes a nanotube ofthe first conductivity type forming a nanotube drain drift region of thetransistor and nanotubes of the second conductivity type forming ananotube body region. The nanotube drain drift region and the nanotubebody region can be depleted uniformly to ensure a high breakdown voltagecharacteristic for the MOSFET device. In other embodiments, thesemiconductor device can be a bipolar transistor device or a diodedevice. The superjunction structure can include a nanotube forming thecollector region of the bipolar transistor or a nanotube forming thecathode region of the diode device.

According to alternate embodiments of the present invention, asemiconductor device includes a superjunction structure formed usingsequential angled implant of the first conductivity type and epitaxialgrowth with a final angled implant of the second conductivity type toform alternate N and P type thin semiconductor regions (“nanotubes”) onthe sidewall of the trench. In this manner, a superjunction structurewith multiple conduction channels is realized. More specifically, thesuperjunction structure includes nanotubes of the first conductivitytypes forming the conduction channels and nanotubes of the secondconductivity type forming the nanotube body regions. The nanotubeconduction channels are formed interleaved with and bordered by thenanotube body regions. The superjunction structure with multipleconduction channels improves the on-state resistance of thesemiconductor device.

FIG. 1 is a cross-sectional view of a lateral MOSFET device according toa first embodiment of the present invention. Referring to FIG. 1, anN-type lateral MOSFET device (“NMOS transistor”) 100 is formed in anarray of parallely connected transistor cells 100 a and 100 b. A desirednumber of transistor cells are used to form the array to realize an NMOStransistor 100 having the desired breakdown voltage and Rdson(drain-to-source “On” resistance) characteristic. The transistor arraycan be a 1-dimensional or 2-dimensional array depending on the number oftransistor cells involved. For instance, a stripe cell structure can beused for a 1-dimensional array and a hexagonal cell structure can beused for a 2-dimensional array.

NMOS transistor 100 is formed on a heavily doped N+ substrate 102. N+substrate 102 serves as the drain electrode of the transistor. An N-typebuffer layer 104 is formed on the N+ substrate 102. The N buffer layer104 is provided to bridge the gap between the nanotube conductingchannel and the N+ substrate 102, as will be described in more detailbelow. A lightly doped P-type epitaxial layer 106 is formed on the N+substrate 102. In some embodiments, the N buffer layer 104 is morelightly doped than the N+ substrate 102 but more heavily doped than theP-type epitaxial layer 106. Trenches are formed in the P-type epitaxiallayer 106. In the present embodiment, the trenches are formed reachingthe N buffer layer 104. The trenches divide the P-type epitaxial layer106 into mesas, referred herein as P-Mesa-Epi layer 106.

NMOS transistor 100 incorporates a superjunction structure formed on thesidewall surface of the P-Mesa-Epi layer 106. More specifically, thesuperjunction structure includes an N-type thin semiconductor region 110(“N-type nanotube”) sandwiched or bordered by P-type thin semiconductorregions 108 (“P-type nanotubes”). N-type nanotube 110 is formed on thesidewalls of the mesas of the P-type epitaxial layer 106 and functionsas the N-type drain drift region of transistor 100. P-type nanotubes 108are also formed on the sidewalls of the P-Mesa-Epi layer 106 on bothsides of the N-type nanotube and function as nanotube body regions. EachP-type nanotube 108 has a doping concentration higher than the dopingconcentration of the P-Mesa-Epi layer 106. A thin epitaxial layer 112 isformed on the sidewall of the trenches and the remaining space in thetrenches is filled with a dielectric layer 114, such as a silicon oxidelayer. The thin epitaxial layer 112 can be undoped or very lightly dopedN-type or P-type epitaxial layer. In the superjunction structure thusformed, the N-type nanotube 110 is the nanotube conduction channel whilethe P-type nanotubes 108 are the nanotube body regions.

A P-type body region 120 is formed in the P-Mesa-Epi layer 106 and is inelectrical contact with at least the N-type nanotube 110. A polysilicongate 118 is formed on the P-Mesa-Epi 106 and overlaps the P-body region120. The polysilicon gate 118 may extend over the dielectric-filledtrench 114. The polysilicon gate 118 is insulated from the P-body region120 by a gate oxide layer 116. An N+ source region 122 and a P+ bodycontact region 124 are formed at the top portion of the P-Mesa-Epi layer106. In particular, the N+ source region 122 is aligned to an edge ofthe polysilicon gate 118. A BPSG layer 126 covers the entire structureand openings are made to the P+ body contact region 124 and/or the N+source region 122 to allow a source contact electrode 130 to be formedfor making electrical connection to the source and the body oftransistor 100. As thus configured, the transistor 100 has a lateralchannel under the polysilicon gate 118 between the N+ source region 122and the N-type nanotube 110 forming the drain drift region of thetransistor. The channel of the transistor 100 is denoted by dotted linesin FIG. 1.

In operation, when NMOS transistor 100 is in the on-state, the N-typenanotube 110 functions as the drain drift region of the transistor withthe on-resistance of the transistor being reduced by the use of thesuperjunction structure. When NMOS transistor 100 is in the off-state, adepletion layer expands from the P-N junction between the N-drift region110 and the P-type nanotube 108/the P-Mesa-Epi layer 106. The N-typenanotube 110 and the P-type nanotube 108/the P-Mesa-Epi layer 106 arecompletely depleted to produce a balanced space charge region in thebody of the transistor. In some cases, the P-Mesa-Epi layer 106 is verylightly doped so that its contribution to the charge balance is verysmall and the P-type nanotubes 108 provide most of the charge in thecharge balance. The balanced space charge in this region allows a highbreakdown voltage to be achieved. More specifically, charge balance in alater MOSFET is achieved by selecting a thickness ratio and a dopingconcentration ratio for the N-drift region and the P-typeNanotube/P-Mesa-Epi layer so that: NXn=PXp, where N denotes the dopingconcentration and Xn denotes the thickness of the N-type nanotube, and Pdenotes the doping concentration and Xp denotes the thickness of theP-type nanotube/P-Mesa-Epi layer. The charge balance allows for highdoping concentrations to be used for the drain drift region to achievelow Rdson, while still attaining high breakdown voltage.

A salient feature of the superjunction structure in NMOS transistor 100is that the N-type nanotube 110 and the P-type nanotube 108 are formedusing simultaneously N and P angled implant using different implantenergies and using dopant species having vastly different diffusivitiesor diffusion rates. In this manner, after the anneal process, implanteddopants of one conductivity type will spread out more than implanteddopants of the other conductivity types and alternating nanotube regionsare thus formed. The process for forming the NMOS transistor 100 will beexplained in more detail below.

FIG. 2 is a cross-sectional view of a lateral MOSFET device according toa second embodiment of the present invention. Referring to FIG. 2, anN-type lateral MOSFET device (“NMOS transistor”) 200 is formed in anarray of parallely connected transistor cells 200 a and 200 b. A desirednumber of transistor cells are used to form the array to realize an NMOStransistor 100 having the desired breakdown voltage and Rdson(drain-to-source “On” resistance) characteristic. The transistor arraycan be a 1-dimensional or 2-dimensional array depending on the number oftransistor cells involved. For instance, a stripe cell structure can beused for a 1-dimensional array and a hexagonal cell structure can beused for a 2-dimensional array.

NMOS transistor 200 has a similar structure as NMOS transistor 100 ofFIG. 1 except for the superjunction structure. In NMOS transistor 200,the superjunction structure is formed to include multiple alternatingN-type nanotube regions 210 and P-type nanotube regions 208. In thismanner, the superjunction structure includes multiple conductionchannels as the drain drift region which further improves theon-resistance characteristics of the transistor. In the embodiment shownin FIG. 2, the superjunction structure includes a first N-type nanotube210A and a second N-type nanotube 210B sandwiched between P-typenanotubes 208. Each P-type nanotube 208 has a doping concentrationhigher than the doping concentration of the P-Mesa-Epi layer 106.

A salient feature of the superjunction structure in NMOS transistor 200is that the nanotubes are formed using repeated N-type angled implantfollowed by epitaxial growth and then a final P-type implant. After theanneal process, the P-type implant spreads to form the P-type nanotubesinterleaving the N-type nanotubes. The process for forming the NMOStransistor 200 will be explained in more detail below.

FIGS. 3(a)-(h) are cross-sectional views illustrating the fabricationprocess steps for forming the lateral MOSFET device of FIG. 1 accordingto embodiments of the present invention. The fabrication process willalso be described with reference to the flowchart in FIG. 4. FIG. 4 is aflowchart illustrating the fabrication process steps for forming thelateral MOSFET device of FIG. 1 in embodiments of the present invention.Referring to FIGS. 3(a)-(h) and 4, the fabrication process 300 startswith the heavily doped N+ substrate 102. An N buffer layer 104 is formedon the N+ substrate 102. Then, at 302, a P-type epitaxial layer 106 isgrown on N+ substrate 102, as shown in FIG. 3(a). Then, at 304, thestructure is subjected to masking and anisotropic etching to formtrenches 105 in the P-type epitaxial layer 106, as shown in FIG. 3(b).As a result of the trench formation, mesas are formed and the P-typeepitaxial layer is now referred to as P-Mesa-Epi layer 106. The trenchesextend all the way through the P-Mesa-Epi layer 106 to the N bufferlayer 104. The exact depth of the trenches is not critical except thatthe bottom of the trench should be close to the N buffer layer 104enough to allow the N buffer layer to counter-dope the bottoms of thesubsequently formed N-type thin semiconductor region, as will bedescribed in more detail below. In some embodiments, the trenches areformed extending close to, up to, or into the N buffer layer 104.

In embodiments of the present invention, the trenches 105 are formedwith tapered sidewall. That is, the trench sidewall does not form aperpendicular angle with the N buffer layer 104 but rather the trenchsidewall has an angle greater than 90° relative to the N buffer layer104. As a result, the mesa thus formed has a trapezoidal shape with thetop of the mesa having a smaller width than the bottom of the mesa. Inone embodiment, the sidewall of the mesa forms an angle of 89° or lesswith the N-buffer layer 104. The doping level of P-Mesa-Epi layer 106 isselected to achieve a balanced space charge when depleted under reversebias and is in part a function of the width of the mesas.

In some embodiments, the N+ substrate 102 may have a dopingconcentration of 3×10¹⁹ cm⁻³ and the N buffer layer 104 may have athickness of 1 μm and a doping concentration of 5×10¹⁶ cm⁻³. TheP-Mesa-Epi Layer 106 may have a thickness of 35-40 μm and a dopingconcentration of 4×10¹⁴ cm⁻³. The cell pitch t_(cp) may be about 12 μmwith the trench 105 having a width of about 9 μm and the mesa having awidth of about 3 μm.

With the trenches thus formed, at 306, simultaneous N and P angledimplantation is performed to implant N-type and P-type dopants into thesidewalls of the trenches 105, as shown in FIG. 3(c). More specifically,the implant angle, the dopant types and implant energy for each dopanttype are selected so that after subsequent annealing, the implantdopants form sandwiched N-type and P-type thin semiconductor regions onthe sidewall of the mesa.

In embodiments of the present invention, simultaneous N and P angledimplantation refers to implantation of the N-type and P-type dopantseither at the same time or one dopant type after another dopant typewithout any intervening anneal step. Thus, in some embodiments, theN-type dopants and the P-type dopants are introduced at the same timeusing different implant energies. In other embodiments, N-typeimplantation and P-type implantation are carried out sequentially withdifferent implant energies and without any annealing step in between.

In embodiments of the present invention, the implant is carried out at ashallow angle, such as less than 20° from the central vertical axis ofthe trenches, as shown schematically by the arrows in FIG. 3(c). In oneembodiment, the implant angle is 15° from the central vertical axis ofthe trenches. During the implantation process, the wafer may be rotatedso that the implant will be equally distributed over all surfaces of thetrenches.

In embodiments of the present invention, the implant species for P-typedopants are selected to have greater diffusion rate (or diffusivity) andlighter atomic mass than that of the implant species for N-type dopants.Meanwhile, the implant energy for the P-type dopants is selected to bemuch lower than the implant energy for the N-type dopants. As a result,P-type dopants are implanted near the sidewall surface of the P-Mesa-Epilayer 106 while the N-type dopants are implanted deeper into theP-Mesa-Epi layer 106, as shown in FIG. 3(c). However, subsequentannealing of the implanted dopants will result in the P-type dopantsspreading out and diffusing deeper into the P-Mesa-Epi layer while theN-type dopants remaining close to where they are implanted. In thismanner, an N-type semiconductor region sandwiched between P-typesemiconductor regions is formed.

In one embodiment, the implant species for P-type dopants is boron (B)and the implant species for N-type dopants is arsenic (As). Furthermore,in one embodiment, for the boron implant, an implant energy of 100 keVand an implant dose of 1.25×10¹³ cm⁻³ are used. In one embodiment, forthe arsenic implant, an implant energy of 500 keV and an implant dose of1.25×10¹³ cm⁻³ are used.

At 308, with the P-type and N-type dopants thus implanted, an epitaxiallayer 112 is formed on the trench surface, as shown in FIG. 3(d). Theepitaxial layer 112 can be undoped or a very lightly doped N-type orP-type epitaxial layer. Then, at 310, the semiconductor structure isannealed to form an N-type nanotube region and P-type nanotube regions.During the annealing process, the P-type dopants with lighter atomicmass and higher diffusivity diffuses or spreads into the P-Mesa-Epilayer 106, passing the region implanted with N-type dopants. Meanwhile,the N-type dopants with lower diffusivity will anneal but the dopantswill remain in the vicinity of the implanted region, as shown in FIG.3(d). During the diffusion process, the epitaxial layer 112 formed onthe trench surface helps the diffusion of the P-type dopants into theP-Mesa-Epi layer. In some embodiments, the epitaxial layer 112 is a verylightly doped P-type epitaxial layer and has a thickness of 1-2 μm.

As a result of the annealing process, N-type nanotube 110 and P-typenanotubes 108 are formed, as shown in FIG. 3(e). Each P-type nanotube108 has a doping concentration higher than the doping concentration ofthe P-Mesa-Epi layer 106. At 312, the remaining portions of the trenchesmay be filled with a dielectric layer 114, such as a silicon oxidelayer, as shown in FIG. 3(f). In some embodiments, the epitaxial layer112 may be formed to fill the trenches and then after annealing, theepitaxial layer 112 is etched back in the trenches and the exposedportions of the trenches are filled with the dielectric layer 114, suchas a silicon oxide layer.

In some embodiments, the angled implant into the trenches may not beable to implant sufficient dopants to the lower portion of the trenches.In order to ensure a reliable connection between the N-type nanotube andthe underlying N+ substrate 102, the N buffer layer 104 is used toprovide out-diffusion of N-type dopants during the anneal process tohelp the N-type nanotube to link up with the N+ substrate 102.Accordingly, during the anneal process, N-type dopants from the N bufferlayer 104 will out-diffuse up to connect to the N-type semiconductorregion formed by the N-type implanted dopants. In this manner, theN-type nanotube 110 is linked to the N+ substrate 102.

At 314, the remaining processing steps to complete the transistorstructure are carried out. For example, subsequent to the trenchdielectric oxide deposition (FIG. 3(f)), a chemical mechanical polishing(CMP) process may be carried out to planarize the surface of thesemiconductor structure. The CMP process may remove the excess oxide andthe thin epitaxial layer 112 which may be formed on the top of the mesasof the P-Mesa-Epi layer 106. Then, an ion implantation process iscarried out to form the P-body region 120 at a top portion of the mesasof the P-Mesa-Epi layer 106, as shown in FIG. 3(g). Referring to FIG.3(h), a gate oxide layer 116 is grown on the P-Mesa-Epi layer 106 andmay extend over the trench structure. In some embodiments, the gateoxide layer 116 is grown using a low temperature process to preventout-diffusion of the N-type and P-type thin semiconductor regions 110and 108.

Then, a polysilicon layer is deposited and patterned to form apolysilicon gate electrode 118. Subsequently, an ion implantation iscarried out to form the N+ source regions 122. The source regions 122are formed in the body regions 120 and are self-aligned to thepolysilicon gate electrode 118. Finally, another ion implantation iscarried out to form the P+ body contact region 124 adjacent the sourceregions 122, as shown in FIG. 3(h). A dielectric layer 126, such asBPSG, is deposited to cover the entire semiconductor structure. In someembodiments, the BPSG layer is planarized by a chemical mechanicalpolishing process and then contact openings are made in the BPSG layer126 to expose at least the P+ body contact region 124 and may bepartially the N+ source region 122. A metal layer is deposited andpatterned to form the source electrode 130. A passivation layer (notshown) is then deposited over the entire semiconductor structure topassivate the NMOS transistor 100.

The fabrication process for forming the lateral MOSFET device 100realizes many advantages over conventional processes. In particular, thefabrication process enables the cell pitch for performing the angledimplant to be relaxed. That is, the trench width can be made wider sothat the angled implant can be performed more easily. More specifically,in the NMOS transistor 100, the fabrication process of the presentinvention enables thin P-type nanotube regions to be formed on bothsides of the N-type nanotube. As a result, the N-type nanotube can beformed with a wider thickness or high doping concentration to carry morecharge per cell pitch. Accordingly, the cell pitch of the transistor canbe relaxed to accommodate the angled implant without compromising theperformance of the transistor.

As described above with reference to FIG. 2, the semiconductor device ofthe present invention can be formed using a superjunction structure thatincludes multiple nanotubes forming multiple conduction channels. Theon-resistance of the semiconductor device can be improved with theprovision of the additional conduction channels.

FIGS. 5(a)-(h) are cross-sectional views illustrating the fabricationprocess steps for forming the lateral MOSFET device of FIG. 2 accordingto embodiments of the present invention. The fabrication process willalso be described with reference to the flowchart in FIG. 6. FIG. 6 is aflowchart illustrating the fabrication process steps for forming thelateral MOSFET device of FIG. 2 in embodiments of the present invention.Referring to FIGS. 5(a)-(h) and 6, the fabrication process 400 startswith the heavily doped N+ substrate 102. At 402, an N buffer layer 104is formed on the N+ substrate 102 and a P-type epitaxial layer 106 isgrown on N+ substrate 102. Then, at 404, the structure is subjected tomasking and anisotropic etching to form trenches in the P-type epitaxiallayer 106, as shown in FIG. 5(a). As a result of the trench formation,mesas are formed and the P-type epitaxial layer is now referred to asP-Mesa-Epi layer 106. The trenches extend all the way through theP-Mesa-Epi layer 106 to the N buffer layer 104. The exact depth of thetrenches is not critical except that the bottom of the trench should beclose to the N buffer layer 104 enough to allow the N buffer layer tocounter-dope the bottoms of the subsequently formed N-type thinsemiconductor regions. In some embodiments, the trenches are formedextending close to, up to, or into the N buffer layer 104.

In embodiments of the present invention, the trenches are formed withtapered sidewall. That is, the trench sidewall does not form aperpendicular angle with the N buffer layer 104 but rather the trenchsidewall has an angle greater than 90° relative to the N buffer layer104. As a result, the mesa thus formed has a trapezoidal shape with thetop of the mesa having a smaller width than the bottom of the mesa. Inone embodiment, the sidewall of the mesa forms an angle of 89° or lesswith the N-buffer layer 104. The doping level of P-Mesa-Epi layer 106 isselected to achieve a balanced space charge when depleted under reversebias and is in part a function of the width of the mesas. In someembodiments, the N+ substrate 102, the N buffer layer 104 and theP-Mesa-Epi layer 106 are formed with thicknesses and dopingconcentration values similar to that of NMOS transistor 100 of FIG. 1and described above with reference to FIGS. 3(a) to 3(h).

With the trenches thus formed, at 406, N-type angled implantation isperformed to implant N-type dopants into the sidewalls of the trenches,as shown in FIG. 5(a). More specifically, the implant angle, the dopanttype and implant energy are selected so that the N-type dopants areimplanted near the trench sidewall surface of the P-Mesa-Epi layer 106.Then, at 408, an epitaxial layer 162 is formed on the trench surface, asshown in FIG. 5(b). In some embodiments, the epitaxial layer 162 is anundoped epitaxial layer. Then, at 410, a second N-type angledimplantation is performed to implant N-type dopants into the sidewallsof the trenches, as shown in FIG. 5(c). As a result, two N-typeimplanted regions are formed which will form two conduction channelsafter annealing. When additional conduction channels are desired, thesteps of performing N-type angled implant (410) followed by forming anepitaxial layer on the trench sidewall (408) can be repeated.

After the final N-type implantation, method 400 continues at 412 toperform a P-type angled implantation to implant P-type dopants into thesidewalls of the trenches, as shown in FIG. 5(d). In embodiments of thepresent invention, both the N-type and P-type implants are carried outat a shallow angle, such as less than 20° from the central vertical axisof the trenches. In one embodiment, the implant angle is 15° from thecentral vertical axis of the trenches. During the implantation process,the wafer may be rotated so that the implant will be equally distributedover all surfaces of the trenches.

In embodiments of the present invention, the implant species for P-typedopants is selected to have greater diffusion rate (or diffusivity) andlighter atomic mass than that of the implant species for N-type dopants.Meanwhile, the implant energy for the P-type dopants is selected to belower than the implant energy of the last N-type implantation. As aresult, P-type dopants are implanted near the sidewall surface of theP-Mesa-Epi layer 106 and the thin epitaxial layer 162 formed thereon.The N-type dopants are positioned deeper into the P-Mesa-Epi layer 106,as shown in FIG. 5(d). The N-type dopants are positioned deeper into theP-Mesa-Epi layer 106 due to the successive implantation and epitaxialprocess and due to the higher implant energy used for the last N-typeimplantation. Subsequent annealing of the implanted dopants will resultin the P-type dopants spreading out and diffusing deeper into theP-Mesa-Epi layer while the N-type dopants remaining close to where theyare implanted. In this manner, an N-type semiconductor regionssandwiched between P-type semiconductor regions are formed. In oneembodiment, the implant species for P-type dopants is boron (B) and theimplant species for N-type dopants is arsenic (As).

At 414, with the P-type and N-type dopants thus implanted, an epitaxiallayer 164 is formed on the trench surface, as shown in FIG. 5(e). Theepitaxial layer 164 can be undoped or a very lightly doped N-type orP-type epitaxial layer. Then, at 416, the semiconductor structure isannealed to form an N-type nanotube regions and P-type nanotube regions.During the annealing process, the P-type dopants with lighter atomicmass and higher diffusivity diffuses or spreads into the P-Mesa-Epilayer 106, passing the regions implanted with N-type dopants. Meanwhile,the N-type dopants with lower diffusivity will anneal but the dopantswill remain in the vicinity of the original implanted regions, as shownin FIG. 5(e). During the diffusion process, the epitaxial layer 164formed on the trench surface helps the diffusion of the P-type dopantsinto the P-Mesa-Epi layer. In some embodiments, the epitaxial layer 164is a lightly doped P-type epitaxial layer and has a thickness of 1-2 μm.

As a result of the annealing process, N-type nanotube 210A and 210B andP-type nanotubes 208 are formed, as shown in FIG. 5(f). Each P-typenanotube 208 has a doping concentration higher than the dopingconcentration of the P-Mesa-Epi layer 106. At 418, the remainingportions of the trenches may be filled with a dielectric layer 114, suchas a silicon oxide layer, as shown in FIG. 5(g). In some embodiments,the epitaxial layer 164 may be formed to fill the trenches and thenafter annealing, the epitaxial layer 164 is etched back in the trenchesand the exposed portions of the trenches are filled with the dielectriclayer 114, such as a silicon oxide layer.

In some embodiments, the angled implant into the trenches may not beable to implant sufficient dopants to the lower portion of the trenches.In order to ensure a reliable connection between the N-type nanotubesand the underlying N+ substrate 102, the N buffer layer 104 is used toprovide out-diffusion of N-type dopants during the anneal process tohelp the N-type nanotubes to link up with the N+ substrate 102.Accordingly, during the anneal process, N-type dopants from the N bufferlayer 104 will out-diffuse up to connect to the N-type semiconductorregions 210A and 210B formed by the N-type implanted dopants. In thismanner, the N-type nanotubes 210A and 210B are linked to the N+substrate 102.

At 420, the remaining processing steps to complete the transistorstructure are carried out. For example, subsequent to the trenchdielectric oxide deposition, a chemical mechanical polishing (CMP)process may be carried out to planarize the surface of the semiconductorstructure. The CMP process may remove the excess oxide and the thinepitaxial layer 164 which may be formed on the top of the mesas of theP-Mesa-Epi layer 106. Then, an ion implantation process is carried outto form the P-body region 120 at a top portion of the mesas of theP-Mesa-Epi layer 106, as shown in FIG. 5(g). Referring to FIG. 5(h), agate oxide layer 116 is grown on the P-Mesa-Epi layer 106 and may extendover the trench structure. In some embodiments, the gate oxide layer 116is grown using a low temperature process to prevent out-diffusion of theN-type and P-type thin semiconductor regions 210 and 208.

Then, a polysilicon layer is deposited and patterned to form apolysilicon gate electrode 118. Subsequently, an ion implantation iscarried out to form the N+ source regions 122. The source regions 122are formed in the body regions 120 and are self-aligned to thepolysilicon gate electrode 118. Finally, another ion implantation iscarried out to form the P+ body contact region 124 adjacent the sourceregions 122, as shown in FIG. 5(h). A dielectric layer 126, such asBPSG, is deposited to cover the entire semiconductor structure. In someembodiments, the BPSG layer is planarized by a chemical mechanicalpolishing process and then contact openings are made in the BPSG layer126 to expose at least the P+ body contact region 124 and may bepartially the N+ source region 122. A metal layer is deposited andpatterned to form the source electrode 130. A passivation layer (notshown) is then deposited over the entire semiconductor structure topassivate the NMOS transistor 200.

In the above described embodiments, the process for forming N-typeMOSFET devices are described. Furthermore, arsenic (As) is used as theN-type dopant and boron (B) is used as the P-type dopant. The selectionof the dopants provides the particular advantage of enabling the P-typedopant to be spread out more than the N-type dopant to form thesandwiched N-type nanotube. In other embodiments, the process can beused to form P-type MOSFET device with the appropriate change in dopantpolarities. For example, to form P-type conducting channels in thesuperjunction structure, gallium (Ga) may be used as the P-type dopantand phosphorus (P) may be used as the N-type dopant. The N-type dopantwill diffuse further and spread out more than the P-type dopant to formbordering N-type nanotubes around the P-type nanotubes.

Semiconductor devices incorporating the superjunction structureconstructed as described above provide many advantages. First, by usingimplanted regions to form the nanotubes, the charge in the superjunctionstructure is controlled by the implantation process. In some cases,doping by ion implantation can be tightly controlled and better thanepitaxial growth. Second, because the conduction channel nanotube issandwiched between the body nanotubes, the charge in the conductionchannel nanotube increases and the on-resistance decreases. It is thenpossible to relax the cell pitch to make the angle implant processeasier.

The above described embodiments are directed to forming superjunctionstructures in N-channel MOSFET devices. However, the superjunctionstructures described above can be applied to form P-channel MOSFETdevices by reversing the polarities of conductivity types used for eachsemiconductor region. Furthermore, the superjunction structuresdescribed above can be applied to form other semiconductor devices, suchas diodes.

Furthermore, in the above described embodiments, an N buffer layer isformed on the semiconductor substrate before the P-type epitaxial layeris formed. In some embodiments, the buffer layer may be omitted and theP-epitaxial layer can be formed directly on the semiconductor substrate.

Although the foregoing embodiments have been described in some detailfor purposes of clarity of understanding, the invention is not limitedto the details provided. There are many alternative ways of implementingthe invention. The disclosed embodiments are illustrative and notrestrictive.

What is claimed is:
 1. A method for forming a semiconductor devicecomprising: providing a heavily doped semiconductor substrate of a firstconductivity type; forming a buffer layer of the first conductivity typeon the semiconductor substrate; forming a semiconductor layer of asecond conductivity type on the buffer layer; forming a plurality oftrenches in the semiconductor layer, the trenches extending close to, upto, or into the buffer layer, the trenches forming mesas in thesemiconductor layer; performing an ion implantation of dopants of thefirst conductivity type and dopants of the second conductivity typedirected to sidewall surfaces of the plurality of trenches, the ionimplantation being performed at an angle relative to the centralvertical axis of the trenches and using a first implant energy for thedopants of the first conductivity type greater than a second implantenergy for dopants of the second conductivity type, the dopants of thesecond conductivity type having a diffusion rate greater than thediffusion rate of the dopants of the first conductivity type; forming anepitaxial layer on the sidewall surfaces of the plurality of trenchesafter the ion implantation; annealing the implanted dopants to form afirst thin semiconductor region of the first conductivity typesandwiched between second thin semiconductor regions of the secondconductivity type, the first and second thin semiconductor regions beingformed near the trench sidewall surface of the mesas; and forming afirst dielectric layer in the trenches, the first dielectric layerfilling at least part of the trenches, wherein the first thinsemiconductor region has a first thickness and a first dopingconcentration, the second thin semiconductor regions having a secondthickness and a second doping concentration, and the mesa of thesemiconductor layer having a third thickness and a third dopingconcentration, the first, second and third thicknesses and the first,second and third doping concentrations being selected to achieve chargebalance in operation.
 2. The method of claim 1, further comprising:forming a body region of the second conductivity type in a top portionof at least a first mesa of the semiconductor layer; forming a gatedielectric layer on the first mesa of the semiconductor layer above thebody region; forming a gate conductive layer above the gate dielectriclayer as the gate electrode; and forming a heavily doped source regionof the first conductivity type in the body region aligned to the gateconductive layer, wherein a lateral MOSFET is formed with thesemiconductor substrate being a drain region, the first thinsemiconductor region being a drain drift region, the channel region ofthe lateral MOSFET being formed in the body region between the sourceregion and the drain drift region.
 3. The method of claim 1, performingan ion implantation of dopants of the first conductivity type anddopants of the second conductivity type comprises: performing the ionimplantation of dopants of the first conductivity type and dopants ofthe second conductivity type simultaneously.
 4. The method of claim 1,performing an ion implantation of dopants of the first conductivity typeand dopants of the second conductivity type comprises: performing theion implantation of dopants of the first conductivity type and dopantsof the second conductivity type sequentially without performing anyannealing in between the sequential ion implantations.
 5. The method ofclaim 1, wherein annealing the implanted dopants to form a first thinsemiconductor region of the first conductivity type comprises: annealingthe implanted dopants to form the first thin semiconductor region of thefirst conductivity type, the buffer layer out-diffusing into the mesa ofthe semiconductor layer to electrically connect the first thinsemiconductor region to the semiconductor substrate.
 6. The method ofclaim 1, wherein the first conductivity type comprises N-typeconductivity and the second conductivity type comprises P-typeconductivity.
 7. The method of claim 6, wherein the dopants of the firstconductivity type comprises arsenic and the dopants of the secondconductivity type comprises boron.
 8. The method of claim 1, wherein thefirst conductivity type comprises P-type conductivity and the secondconductivity type comprises N-type conductivity.
 9. The method of claim1, wherein performing an ion implantation of dopants of the firstconductivity type and dopants of the second conductivity type directedto sidewall surfaces of the plurality of trenches comprises: performingthe ion implantation at an angle relative to the central vertical axisof the trenches, the angle being less than 20 degrees.
 10. The method ofclaim 1, wherein performing an ion implantation of dopants of the firstconductivity type and dopants of the second conductivity type directedto sidewall surfaces of the plurality of trenches comprises: performingthe ion implantation to form implanted dopants of the secondconductivity type in the mesas and near the sidewall surface of thetrenches and to form implanted dopants of the first conductivity type inthe mesas and deeper from the sidewall surface of the trenches ascompared to the implanted dopants of the second conductivity type. 11.The method of claim 1, wherein forming an epitaxial layer on thesidewall surfaces of the plurality of trenches comprises: forming anepitaxial layer being undoped or lightly doped of the first or secondconductivity type.
 12. The method of claim 1, wherein forming aplurality of trenches in the semiconductor layer comprises: forming theplurality of trenches in the semiconductor layer having taperedsidewall, the sidewall of the mesas having an angle of less thanperpendicular with the buffer layer.
 13. The method of claim 7, whereinthe first implant energy for the arsenic dopants is 500 keV and thesecond implant energy for the boron dopants is 100 keV.